Localization of Implanted Impurities in Silicon
نویسندگان
چکیده
منابع مشابه
Investigation of tellurium - implanted silicon *
Hall and sheet-resistivity measurements as a function of temperature combined with layer removal have been used to study Si implanted with Teat energies up to 220 keY. At low doses c::S: 4 X l 0 em--'), Te has a donor level with a 140-meV activation energy. The activation energy decreases at higher Te doses and is approximately equal to zero forTe doses<: I 0 cm• At high dose levels, the number...
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ژورنال
عنوان ژورنال: American Journal of Applied Sciences
سال: 2005
ISSN: 1546-9239
DOI: 10.3844/ajassp.2005.857.859